검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T Journal of Crystal Growth, 510, 18, 2019 |
| 2 |
Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition Cerba T, Martin M, Moeyaert J, David S, Rouviere JL, Cerutti L, Alcotte R, Rodriguez JB, Bawedin M, Boutry H, Bassani F, Bogumilowicz Y, Gergaud P, Tournie E, Baron T Thin Solid Films, 645, 5, 2018 |
| 3 |
Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0.53Ga0.47As template Alcotte R, Martin M, Moeyaert J, Gergaud P, David S, Cerba T, Bassani F, Ducroquet F, Bogumilowicz Y, Baron T Thin Solid Films, 645, 119, 2018 |
| 4 |
Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor-liquid-solid mechanism Brouzet V, Salem B, Periwal P, Alcotte R, Chouchane F, Bassani F, Baron T, Ghibaudo G Solid-State Electronics, 118, 26, 2016 |