| 1 |
pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption
Wang JN, Zhang X, Li H, Wang C, Li HR, Keller S, Mishra UK, Nener BD, Parish G, Atkin R
Journal of Colloid and Interface Science, 583, 331, 2021 |
| 2 |
Theoretical exploration of quantum efficiency ofAl(x)Ga(1-x)Nmonolayer photocathode with varying Al contents and ultra-thin emission layer
Liu L, Tian J, Lu FF
International Journal of Energy Research, 44(13), 10962, 2020 |
| 3 |
Growth and thermal annealing for acceptor activation of p-type (Al)GaN epitaxial structures: Technological challenges and risks
Zlotnik S, Sitek J, Rosinski K, Michalowski PP, Gaca J, Wojcik M, Rudzinski M
Applied Surface Science, 488, 688, 2019 |
| 4 |
Nanostructured GaN and AlGaN/GaN heterostructure for catalyst-free low-temperature CO sensing
Mishra M, Bhalla NK, Dash A, Gupta G
Applied Surface Science, 481, 379, 2019 |
| 5 |
Degradation behavior of deep UV-LEDs studied by electro-optical methods and transmission electron microscopy
Xiu HX, Zhang Y, Fu JJ, Ma ZH, Zhao LX, Feng JJ
Current Applied Physics, 19(1), 20, 2019 |
| 6 |
Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE
Dinh DV, Amano H, Pristovsek M
Journal of Crystal Growth, 512, 100, 2019 |
| 7 |
MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates
Sundaram S, Li X, Alam S, Ayari T, Halfaya Y, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A
Journal of Crystal Growth, 507, 352, 2019 |
| 8 |
Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back barrier
Kim JG, Kang SH, Janicki L, Lee JH, Ju JM, Kim KW, Lee YS, Lee SH, Lim JW, Kwon HS, Lee JH
Solid-State Electronics, 152, 24, 2019 |
| 9 |
Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface
Chen DB, Wan LJ, Li J, Liu ZK, Li GQ
Solid-State Electronics, 151, 60, 2019 |
| 10 |
Enhanced pH sensitivity of AlGaN/GaN ion-sensitive field effect transistor with Al2O3 synthesized by atomic layer deposition
Wang L, Li LA, Zhang T, Liu XK, Ao JP
Applied Surface Science, 427, 1199, 2018 |
