검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Normally-off Al2O3/GaN MOSFET: Role of border traps on the device transport characteristics Wang HY, Wang JY, Liu JQ, He YD, Wang MJ, Yu M, Wu WG Solid-State Electronics, 141, 13, 2018 |
| 2 |
Characteristics of GaN and AlGaN/GaN FinFETs Im KS, Kang HS, Lee JH, Chang SJ, Cristoloveanu S, Bawedin M, Lee JH Solid-State Electronics, 97, 66, 2014 |
| 3 |
Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator Sugiura S, Hayashi Y, Kishimoto S, Mizutani T, Kuroda M, Ueda T, Tanaka T Solid-State Electronics, 54(1), 79, 2010 |