검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Fast AlGaN growth in a whole composition range in planetary reactor Lundin WV, Nikolaev AE, Rozhavskaya MM, Zavarin EE, Sakharov AV, Troshkov SI, Yagovkina MA, Tsatsulnikov AF Journal of Crystal Growth, 370, 7, 2013 |
| 2 |
Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy Agrawal M, Dharmarasu N, Radhakrishnan K, Ravikiran L Thin Solid Films, 520(24), 7109, 2012 |
| 3 |
Growth and characterization of c-plane AlGaN on gamma-LiAlO2 Tun CJ, Kuo CH, Fu YK, Kuo CW, Chou MMC, Chi GC Journal of Crystal Growth, 311(14), 3726, 2009 |
| 4 |
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application Wang XL, Chen TS, Xiao HL, Tang J, Ran JX, Zhang ML, Feng C, Hou QF, Wei M, Jiang LJ, Li JM, Wang ZG Solid-State Electronics, 53(3), 332, 2009 |
| 5 |
High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz Wang XL, Chen TS, Xiao HL, Wang CM, Hu GX, Luo WJ, Tang J, Guo LC, Li JM Solid-State Electronics, 52(6), 926, 2008 |
| 6 |
Improvement of crystal quality of AlN and AlGaN epitaxial layers by controlling the strain with the (AlN/GaN) multi-buffer layer Niikura E, Murakawa K, Hasegawa F, Kawanishi H Journal of Crystal Growth, 298, 345, 2007 |
| 7 |
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure Wang CM, Wang XL, Hu GX, Wang JX, Li HP, Wang ZG Applied Surface Science, 253(2), 762, 2006 |
| 8 |
Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer Miyoshi M, Egawa T, Ishikawa H Solid-State Electronics, 50(9-10), 1515, 2006 |
| 9 |
Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire Johnson JW, Han J, Baca AG, Briggs RD, Shul RJ, Wendt JR, Monier C, Ren F, Luo B, Chu SNG, Tsvetkov D, Dmitriev V, Pearton SJ Solid-State Electronics, 46(4), 513, 2002 |
| 10 |
Highly selective dry etching of III nitrides using an inductively coupled Cl-2/Ar/O-2 plasma Lee JM, Chang KM, Lee IH, Park SJ Journal of Vacuum Science & Technology B, 18(3), 1409, 2000 |