검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Growth and characterization of quaternary AlInGaN multiple quantum wells with different aluminum composition Liu T, Jiao SJ, Wang DB, Zhao LC, Yang TP, Xiao ZG Applied Surface Science, 301, 178, 2014 |
| 2 |
Growth and characterization of a-plane AlxGa1-xN alloys by metalorganic chemical vapor deposition Huang HM, Ling SC, Chen JR, Ko TS, Li JC, Lu TC, Kuo HC, Wang SC Journal of Crystal Growth, 312(6), 869, 2010 |
| 3 |
AlxGa1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier Chen WS, Chang SJ, Su YK, Wang RL, Kuo CH, Shei SC Journal of Crystal Growth, 275(3-4), 398, 2005 |
| 4 |
Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects Valizadeh P, Pavlidis D, Shiojima K, Makimura T, Shigekawa N Solid-State Electronics, 49(8), 1352, 2005 |