검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Effect of thermal annealing on the structural and mechanical properties of amorphous silicon carbide films prepared by polymer-source chemical vapor deposition Awad Y, El Khakani MA, Brassard D, Smirani R, Camire N, Lessard M, Aktik C, Scarlete M, Mouine J Thin Solid Films, 518(10), 2738, 2010 |
| 2 |
Electrical characterization of amorphous silicon carbide thin films deposited via polymeric source chemical vapor deposition Fanaei T, Camjre N, Aktik C, Gujrathi S, Lessard A, Awad Y, Oulachgar E, Scarlete M Thin Solid Films, 516(12), 3755, 2008 |
| 3 |
Thermally induced interfacial interactions between. various metal substrates and a-SiC thin films deposited by a polymer-source chemical vapor deposition Awad Y, Khakani MA, Aktik C, Mouine J, Camire N, Lessard M, Scarlete M Materials Chemistry and Physics, 104(2-3), 350, 2007 |
| 4 |
Chemical and structural characterization of SiONC dielectric thin film deposited by PSCVD Oulachgar EH, Aktik C, Dostie S, Sowerby R, Gujrathi S, Scarlete M Journal of the Electrochemical Society, 153(11), F255, 2006 |
| 5 |
Passivation of GaAs using P2S5/(NH4)(2)S+Se and (NH4)(2)S+Se Fanaei T, Aktik C Journal of Vacuum Science & Technology A, 22(3), 874, 2004 |
| 6 |
Fabrication of (NH4)(2)S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition Jaouad A, Aimez V, Aktik C, Bellatreche K, Souifi A Journal of Vacuum Science & Technology A, 22(3), 1027, 2004 |
| 7 |
Passivation of GaAs metal-insulator-semiconductor structures by (NH4)(2)S-x and by evaporation Of SiO2 Jaouad A, Aktik C Journal of Vacuum Science & Technology A, 20(3), 1154, 2002 |
| 8 |
Interface states distribution in electrical stressed oxynitrided gate-oxide Belkouch S, Nguyen TK, Landsberger LM, Aktik C, Jean C, Kahrizi M Journal of the Electrochemical Society, 145(7), 2489, 1998 |