검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure Doundoulakis G, Adikimenakis A, Stavrinidis A, Tsagaraki K, Androulidaki M, Deligeorgis G, Konstantinidis G, Georgakilas A Solid-State Electronics, 158, 1, 2019 |
| 2 |
Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires Eftychis S, Kruse J, Koukoula T, Kehagias T, Komninou P, Adikimenakis A, Tsagaraki K, Androulidaki M, Tzanetakis P, Iliopoulos E, Georgakilas A Journal of Crystal Growth, 442, 8, 2016 |
| 3 |
Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE Adikimenakis A, Sahonta SL, Dimitrakopulos GP, Domagala J, Kehagias T, Komninou P, Iliopoulos E, Georgakilas A Journal of Crystal Growth, 311(7), 2010, 2009 |
| 4 |
InN films and nanostructures grown on Si (111) by RF-MBE Ajagunna AO, Adikimenakis A, Iliopoulos E, Tsagaraki K, Androulidaki M, Georgakilas A Journal of Crystal Growth, 311(7), 2058, 2009 |
| 5 |
Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth Iliopoulos E, Adikimenakis A, Dimakis E, Tsagaraki K, Konstantinidis G, Georgakilas A Journal of Crystal Growth, 278(1-4), 426, 2005 |