검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Polytype dependence of transition metal-related deep levels in 4H-, 6H-and 15R-SiC Grillenberger J, Achtziger N, Pasold G, Witthuhn W Materials Science Forum, 389-3, 573, 2002 |
| 2 |
Quantitative modeling of hydrogen diffusion and reactivation of H-passivated Al-acceptors in SiC Hulsen C, Achtziger N, Herold J, Witthuhn W Materials Science Forum, 353-356, 331, 2001 |
| 3 |
Band gap states of Cr in the lower part of the SiC band gap Pasold G, Achtziger N, Grillenberger J, Witthuhn W Materials Science Forum, 353-356, 471, 2001 |
| 4 |
Tantalum and tungsten in silicon carbide: Identification and polytype dependence of deep levels Grillenberger J, Achtziger N, Pasold G, Sielemann R, Witthuhn W Materials Science Forum, 353-356, 475, 2001 |
| 5 |
Passivation and reactivation of shallow level defects in p-CdTe after low-energy hydrogen implantation Reislohner U, Achtziger N, Hulsen C, Witthuhn W Journal of Crystal Growth, 214, 979, 2000 |
| 6 |
Photoluminescence and DLTS measurements of 15MeV Erbium implanted 6H and 4H SiC Shishkin Y, Choyke WJ, Devaty RP, Achtziger N, Opfermann T, Witthuhn W Materials Science Forum, 338-3, 639, 2000 |
| 7 |
On the existence of deep levels of the accepters Ga and In and of the potential double accepters Zn and Cd in SiC Achtziger N, Grillenberger J, Uhrmacher M, Witthuhn W Materials Science Forum, 338-3, 749, 2000 |
| 8 |
Reactivation of hydrogen-passivated aluminum acceptors in p-type SiC Hulsen C, Achtziger N, Reislohner U, Witthuhn W Materials Science Forum, 338-3, 929, 2000 |
| 9 |
Formation of passivated layers in p-type SiC by low energy ion implantation of hydrogen Achtziger N, Hulsen C, Janson M, Linnarsson MK, Svensson BG, Witthuhn W Materials Science Forum, 338-3, 933, 2000 |