검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Development of GaAs-based MOSFET using molecular beam epitaxy Droopad R, Rajagopalan K, Abrokwah J, Adams L, England N, Uebelhoer D, Fejes P, Zurcher P, Passlack M Journal of Crystal Growth, 301, 139, 2007 |
| 2 |
Gate dielectric on compound semiconductors by molecular beam epitaxy Droopad R, Rajagopalan K, Abrokwah J, Passlack M Journal of Vacuum Science & Technology B, 24(3), 1479, 2006 |
| 3 |
In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm(2)/Vs for use in high-kappa dielectric NMOSFETs Droopad R, Rajagopalan K, Abrokwah J, Canonico M, Passlack M Solid-State Electronics, 50(7-8), 1175, 2006 |
| 4 |
Interface charge and nonradiative carrier recombination in Ga2O3-GaAs interface structures Passlack M, Yu Z, Droopad R, Bowers B, Overgaard C, Abrokwah J, Kummel AC Journal of Vacuum Science & Technology B, 17(1), 49, 1999 |