화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Glide of threading edge dislocations after basal plane dislocation conversion during 4H-SiC epitaxial growth
Abadier M, Song HZ, Sudarshan TS, Picard YN, Skowronski M
Journal of Crystal Growth, 418, 7, 2015
2 Nucleation of 3C-SiC associated with threading edge dislocations during chemical vapor deposition
Abadier M, Berechman RA, Neudeck PG, Trunek AJ, Skowronski M
Journal of Crystal Growth, 347(1), 45, 2012