화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system
Bennett BR, Bracker AS, Magno R, Boos JB, Bass R, Park D
Journal of Vacuum Science & Technology B, 18(3), 1650, 2000
2 Ohmic contacts in AlSb InAs high electron mobility transistors for low-voltage operation
Boos JB, Bennett BR, Kruppa W, Park D, Mittereder J, Bass R, Twigg ME
Journal of Vacuum Science & Technology B, 17(3), 1022, 1999