| 1 |
Dependence of electrical properties on sulfur distribution in atomic-layer-deposited HfO2 thin film on an InP substrate
Jin HS, Seok TJ, Cho DY, Park TJ
Applied Surface Science, 491, 83, 2019 |
| 2 |
Effect of thermal annealing sequence on the crystal phase of HfO2 and charge trap property of Al2O3/HfO2/SiO2 stacks
Na H, Jeong J, Lee J, Shin H, Lee S, Sohn H
Current Applied Physics, 17(10), 1361, 2017 |
| 3 |
Silicon surface passivation using thin HfO2 films by atomic layer deposition
Gope J, Vandana, Batra N, Panigrahi J, Singh R, Maurya KK, Srivastava R, Singh PK
Applied Surface Science, 357, 635, 2015 |
| 4 |
Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing
Jin HS, Cho YJ, Seok TJ, Kim DH, Kim DW, Lee SM, Park JB, Yun DJ, Kim SK, Hwang CS, Park TJ
Applied Surface Science, 357, 2306, 2015 |
| 5 |
High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photoemission
Chellappan RK, Gajula DR, McNeill D, Hughes G
Applied Surface Science, 292, 345, 2014 |
| 6 |
Transmission electron microscopy studies of HfO2 thin films grown by chloride-based atomic layer deposition
Mitchell DRG, Aidla A, Aarik J
Applied Surface Science, 253(2), 606, 2006 |
| 7 |
Enhancement of the characteristics of the ALD HfO2 film by using the high-pressure D-2 annealing
Baik KH, Ahn SJ, Park CG, Lee S, Ahn S
Materials Science Forum, 510-511, 190, 2006 |
