검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy Stemmer J, Fedler F, Klausing H, Mistele D, Rotter T, Semchinova O, Aderhold J, Sanchez AM, Pacheco FJ, Molina SI, Fehrer M, Hommel D, Graul J Journal of Crystal Growth, 216(1-4), 15, 2000 |