화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Surface morphology evolution of CeO2/YSZ (001) buffer layers fabricated via magnetron sputtering
Zhang YY, Feng F, Shi K, Lu HP, Xiao SZ, Wu W, Huang RX, Qu TM, Wang XH, Wang Z, Han ZH
Applied Surface Science, 284, 150, 2013
2 Semicrystalline polyphosphazenes: A comparative study of topology, morphology, and contact angles for three fluorous and one aryl polyphosphazene
King A, Presnall D, Steely LB, Allcock HR, Wynne KJ
Polymer, 54(3), 1123, 2013
3 Rapid preparation of highly ordered ultraflat ZnO surfaces
Gotzen J, Witte G
Applied Surface Science, 258(24), 10144, 2012
4 Visualization of thermally-activated degradation pathways of tris(8-hydroxyquinoline) aluminum thin films for electroluminescence application
Xu MS, Xu JB
Thin Solid Films, 491(1-2), 317, 2005
5 Evolution of surface morphology of Si-trench sidewalls during hydrogen annealing
Hiruta R, Kuribayashi H, Shimizu S, Sudoh K, Iwasaki H
Applied Surface Science, 237(1-4), 63, 2004
6 Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAS(001)
Morimura T, Mori T, Cho MW, Hanada T, Yao T
Current Applied Physics, 4(6), 621, 2004
7 Effects on surface morphology of epitaxial Y2O3 layers on Si(001) after postgrowth annealing
Ioannou-Sougleridis V, Constantoudis V, Alexe M, Scholz R, Vellianitis G, Dimoulas A
Thin Solid Films, 468(1-2), 303, 2004
8 Formation of nano-sized pinholes array in thin Ni film on MgO(100) substrate
Lin C, Naramoto H, Xu YH, Kitazawa S, Narumi K, Sakai S
Thin Solid Films, 443(1-2), 28, 2003
9 The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature
Senzaki J, Fukuda K, Imai S, Tanaka Y, Kobayashi N, Tanoue H, Okushi H, Arai K
Applied Surface Science, 159, 544, 2000
10 Surface characterization of NdF3 layers on Si(111) substrates grown by molecular beam epitaxy
Ko JM, Inaba K, Durbin SD, Fukuda T
Journal of Crystal Growth, 212(1-2), 155, 2000