화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Leakage characterization of top select transistor for program disturbance optimization in 3D NAND flash
Zhang Y, Jin L, Jiang DD, Zou XQ, Zhao ZG, Gao J, Zeng M, Zhou WB, Tang ZY, Huo ZL
Solid-State Electronics, 141, 18, 2018
2 Vertical-Channel STacked ARray (VCSTAR) for 3D NAND flash memory
Park SH, Kim Y, Kim W, Seo JY, Park BG
Solid-State Electronics, 78, 34, 2012
3 3D NAND flash memory with laterally-recessed channel (LRC) and connection gate architecture
Yun JG, Lee JD, Park BG
Solid-State Electronics, 55(1), 37, 2011
4 Stacked-nanowire device with virtual source/drain (SD-VSD) for 3D NAND flash memory application
Yun JG, Cho S, Park BG
Solid-State Electronics, 64(1), 42, 2011