| 1 |
Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs
Schwarz M, Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 82, 86, 2013 |
| 2 |
Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs
Schwarz M, Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 69, 72, 2012 |
| 3 |
2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current
Schwarz M, Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 63(1), 119, 2011 |
| 4 |
2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET
Schwarz M, Weidemann M, Kloes A, Iniguez B
Solid-State Electronics, 54(11), 1372, 2010 |
| 5 |
Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs
Svilicic B, Jovanovic V, Suligoj T
Solid-State Electronics, 53(5), 540, 2009 |
| 6 |
Compact model of output conductance in nanoscale bulk MOSFET based on 2D analytical calculations
Weidemann M, Kloes A, Iniguez B
Solid-State Electronics, 52(11), 1722, 2008 |
