| 1 |
Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations
Jameel DA, Aziz M, Felix JF, Al Saqri N, Taylor D, Albalawi H, Alghamdi H, Al Mashary F, Henini M
Applied Surface Science, 387, 228, 2016 |
| 2 |
First-principles investigations of GaAs(311)A surface reconstruction -failure of the electron counting model
Taguchi A, Shiraishi K
Applied Surface Science, 237(1-4), 189, 2004 |
| 3 |
Si doped p- and n-type AlxGa1-xAs epilayers for high density lateral-junction LED arrays on (311)A patterned substrate
Saravanan S, Dharmarasu N, Vaccaro PO, Ocampo JMZ, Kubota K, Saito N
Solid-State Electronics, 48(10-11), 1791, 2004 |
| 4 |
Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)A and (100) substrates
Gong Q, Notzel R, Schonherr HP, Ploog KH
Applied Surface Science, 190(1-4), 480, 2002 |
| 5 |
Study of molecular-beam epitaxy growth on patterned GaAs (311)A substrates with different mesa height
Gong Q, Notzel R, Schonherr HP, Ploog KH
Journal of Crystal Growth, 220(1-2), 23, 2000 |
| 6 |
Fabrication of GaAs quantum wires by natural selective doping and its characterization by electrostatic force microscope
Yoh K, Takabayashi S
Journal of Vacuum Science & Technology B, 18(3), 1675, 2000 |
