화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Interface states of SiO(2)/SiC on (11(2)over-bar-0) and (0001) Si faces
Yano N, Kimoto T, Matsunami H
Materials Science Forum, 353-356, 627, 2001
2 Steam annealing effects on CV characteristics of MOS structures on (11(2)over-bar-0) face of 4H-SiC
Yoshikawa M, Ohshima T, Itoh H, Takahashi K, Kitabatake M
Materials Science Forum, 353-356, 635, 2001
3 Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face
Yano H, Hirao T, Kimoto T, Matsunami H, Asano K, Sugawara Y
Materials Science Forum, 338-3, 1105, 2000