| 1 |
Role of the Si-Si bond stability in the first stages of Ti diffusion on a Si(111) 2 x 1 surface. A periodic DFT study
Anez R, Sierraalta A, San-Miguel MA, Sanz JF
Applied Surface Science, 273, 496, 2013 |
| 2 |
Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology
Bantaculo R, Saitoh E, Miyamoto Y, Handa H, Suemitsu M
Thin Solid Films, 520(2), 730, 2011 |
| 3 |
N-type doping of GaN/Si(111) using Al0.2Ga0.8N/ALN composite buffer layer and Al0.2Ga0.8N/GaN superlattice
Kim DW, Lee CR
Journal of Crystal Growth, 286(2), 235, 2006 |
| 4 |
Electron correlation effects at semiconductor interfaces: a comparison of the Si(111)-3 X 3 and the Sn/Ge(111)-3 X 3 reconstructions
Perez R, Ortega J, Flores F
Applied Surface Science, 166(1-4), 45, 2000 |
| 5 |
Electronic surface structure of CoSi2(111)/Si(111): implications for ballistic electron-emission microscopy currents
Reuter K, de Andres PL, Garcia-Vidal FJ, Flores F, Heinz K
Applied Surface Science, 166(1-4), 103, 2000 |
| 6 |
Fermi level pinning on HF etched silicon surfaces investigated by photoelectron spectroscopy
Schlaf R, Hinogami R, Fujitani M, Yae S, Nakato Y
Journal of Vacuum Science & Technology A, 17(1), 164, 1999 |
| 7 |
Formation and growth of CoSi2 on (001)Si inside 0.2-2 mu m oxide openings prepared by electron-beam lithography
Yew JY, Chen LJ, Wu WF
Journal of Vacuum Science & Technology B, 17(3), 939, 1999 |
| 8 |
Effect of impurities on initial stages of phase formation for the system of Ti deposited on (001) Si-Ge layers
Beregovsky M, Levin I, Berner A, Eizenberg M, Demuth V, Strunk HP
Thin Solid Films, 338(1-2), 110, 1999 |
| 9 |
Electrodeposition of Pb on n-Si(111)
Rashkova B, Guel B, Potzschke RT, Staikov G, Lorenz WJ
Electrochimica Acta, 43(19-20), 3021, 1998 |
| 10 |
The potential distribution at the semiconductor/solution interface
Natarajan A, Oskam G, Searson PC
Journal of Physical Chemistry B, 102(40), 7793, 1998 |
