초록 |
Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low memory capacities to high-capacity memory devices. Here, we report the high-capacity OFET memories based on the multi-layer stacking of densely packed hydrophobic metal nanoparticle (NP) layers in place of the traditional single charge-trapping layer systems. We demonstrated that the memory performances of devices could be significantly enhanced by controlling adsorption isotherm behavior, multi-layer structure, and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au NPs (TOA-AuNPs) were layer-by-layer assembled with an poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-AuNP)n films were used as a multi-stacked charge trapping layers. For a single AuNP layer with a number density of 1.82 × 1012 cm–2, the memory window was measured to be 97 V. And the 4 AuNP layers exhibited a large memory window exceeding 145 V. |