| 학회 |
한국재료학회 |
| 학술대회 |
2005년 가을 (11/10 ~ 11/11, 한양대학교) |
| 권호 |
11권 2호 |
| 발표분야 |
반도체재료 |
| 제목 |
금속 촉매를 이용한 실리콘 나노선 성장 중 실리콘 웨이퍼 위의 산화박막의 영향 |
| 초록 |
Silicon nanowires are known to grow rapidly with a presence of the metal catalysts on Si substrate. Utilizing an Au or Ti thin film as a catalyst layer which was deposited on a thin thermal oxide layer, the growth feature of silicon nanowires was monitored with or without presence of silane source gas. This attempt was purposely designed to toggle the mechanisms of the silicon supply between the Vapor-Liquid-Solid and Solid-liquid-Solid phase relations during the nanowire growth. Sub-10-nm-thick Au and Ti thin films were deposited by thermal evaporator. |
| 저자 |
정양규, 지상원, 이정호
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| 소속 |
한양대 |
| 키워드 |
nanowires; VLS; SLS; crystal growth; nanostructures; nanotechnology; self-assembly
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| E-Mail |
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