| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 가을 (10/06 ~ 10/08, 제주 ICC) |
| 권호 |
39권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Low-temperature-processed alumina/polyimide gate insulator for solution-processed metal oxide thin-film transistors |
| 초록 |
Recently, polymer gate insulators with metal oxide interlayers for solution-processed metal oxide thin-film transistors (TFTs) have been reported. The surface modification of polymer gate insulators with the interlayer is effective to improve the performance of metal oxide TFTs. For low-cost printed TFT applications, the low-temperature processable gate insulators should be developed. We studied low-temperature-processed alumina/polyimide gate insulators for solution-processed metal oxide thin-film transistors. The 230 °C-annealed, solution-processed ZnO TFTs with the bilayer gate insulator showed reasonable device performance. |
| 저자 |
유성미1, 김윤호2, 가재원1, 이미혜1, 류주환1, 장광석2
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| 소속 |
1한국화학(연), 2충남대 |
| 키워드 |
Polymer gate insulator; ZnO TFT; Surface-modification
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| E-Mail |
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