| 초록 |
Flexible Gallium nitride (GaN) attracts great interest for LED, pressure sensor, and flexible display, because of its bendable, thin, and lightweight properties. Laser lift-off (LLO) process is one of widely used technique to transfer flexible GaN on plastic substrates. But, it is difficult to optimize the adhesive strength between GaN and carrier interface. If there is improper adhesive strength at interface, GaN film can't be transferred to plastic substrate. To solve this critical problem, our research group have investigated some kinds of materials as a carrier in the LLO process to transfer large area GaN on flexible substrate. It is good candidates that metal alloy, epoxy based photoresist and polyurethane that relax the stress and adhere well to GaN surface. Our group analyzed transferred GaN surface using Atomic Force Microscope (AFM) and Scanning Electron Microscope(SEM). By optimizing carrier material in the LLO process, we can fabricate GaN based flexible LED. |
