| 학회 |
한국재료학회 |
| 학술대회 |
2004년 가을 (11/05 ~ 11/05, 인하대학교) |
| 권호 |
10권 2호 |
| 발표분야 |
반도체 II(화합물) |
| 제목 |
Be-codoped GaMnAs 반도체의 성장 및 분석 |
| 초록 |
Be-codoped GaMnAs films were systematically grown via molecular beam epitaxy with varying Mn- and Be-flux. Mn flux was varied to cover from solid solution type GaMnAs to precipitated GaMnAs. Be flux was controlled to exhibit semiconducting and metallic resistivity of the layers. The structural, electrical, and magnetic properties were investigated on as-grown and annealed structures. The lightly Be-codoped GaAs:(Mn,Be) layers showed room temperature ferromagnetism originating from MnAs clusters, but did not reveal magnetotransport due to small magnetoresistance and high resistance of the matrix. However, the degenerately Be-codoped GaAs:(Mn,Be) layers revealed room temperature magnetotransport assisted by the high conductance in the matrix. The Be-codoping promoted segregation of new phase of MnGa, and annealing of GaAs:Mn layers also promoted MnGa formation. |
| 저자 |
임완순, Fu Cheng Yu, Cun Xu Gao, 김도진, 김효진, 임영언
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| 소속 |
충남대 |
| 키워드 |
GaMnAs; Be codoping; MBE; ferromagnetic semiconductor
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| E-Mail |
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