| 초록 |
Recently, the memory devices are the essential components of most electric device in our daily life. Especially, the random access memory (ReRAM) has received great deal attention as promising next-generation nonvolatile memory device. Organic-inorganic hybrid perovskite (OHP) materials exhibited unique phenomenon, which is hysteresis of photocurrent density-voltage (J-V) curves due to displacement current of ferroelectric materials with multi-domain structures, ions/defects migration by ionic crystalline characteristics of perovskite material, and charge trapping/detrapping in bulk and interface of perovskite material. Accordingly, we fabricated the CH3NH3PbI3 (MAPbI3) OHP memory with different grain size MAPbI3 OHP film controlled by non-solvents inter-diffusion controlled crystallization process. The MAPbI3 OHP memory exhibited ＞ 0.1 TB/in2 storage capacity, ＞ 600 cycles endurance, ＞ 104 s data retention time, ~ 0.7 V set, and ~ -0.61 V re-set bias voltage. |
