| 초록 |
To obtain selectively self-organized active layers of organic field-effect transistors (OFETs) and inverters from a solution-phase organic semiconductor, we locally patterned an oxide dielectric, covered with a hydrophobic fluoropolymer, using O2-plasma-etching. solution-casted semiconduting molecules were selectively crystallized on the O2-plasma-etched area, where a hydrophilic oxide surface was produced. Modification of the patterned oxide dielectrics with hexamethyldisilazane led to a field-effect mobility of the triisopropylsilylethynyl pentacene-based OFETs of 0.185 cm2V-1s-1, a substhreshold swing of 0.738 V/decade, and an on/off ratio of 107. Moreover, an inverter composed of two of these OFETs showed good device-operation and inverter gain of 5.6. |
