| 초록 |
We demonstrated a new design of flexible vertical Schottky barrier transistors and logic gates based on the graphene-organic semiconductor-metal heterostructures and ion gel gate dielectrics. The current was modulated by tuning the Schottky barrier height across the graphene-semiconductor junction. P-type pentacene and n-type PTCDI-C8 were utilized as organic semiconducting layers for p- and n-type vertical SB transistors, respectively. High-capacitance ion gel gate dielectrics were applied to modulate the wok function of the graphene, which yielded both the sub-1V operation and the simplified coplanar geometry of the device. The resulting p- and n-type devices exhibited excellent device performances including low-voltage operation with a high current density and on-off current ratio. Furthermore, the low-power logic gates such as the complementary inverter, NAND, and NOR were successfully fabricated onto plastic substrate. The simple, scalable, and room-temperature deposition of both organic semiconductors and gate dielectrics integrated with transparent and flexible graphene opens up new opportunities to realize future transparent, flexible, and low-power organic electronics. |
