| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 나노 및 생체재료 |
| 제목 | Characteristic comparison of Be and Mg doped GaN grown using single GaN precursor |
| 초록 | Recently, much attention has been made on GaN and its related Ⅲ-Ⅴ semiconductor materials due to their applications to optoelectronics and high temperature electronic devices. Doping characteristics of Mg and Be in GaN films grown using a new single GaN precursor via molecular beam epitaxy were investigated. X-ray diffraction analysis confirmed that the GaN lattice expands or contracts with Mg or Be doping due to their differences in the size with respect to Ga. The c-axis oriented growth mode has shifted to the basal-plane orientation as Mg increases. This work was supported by ReCAMM. |
| 저자 | Cunxu Gao1, Fucheng Yu2, Se Young Jeong1, Dojin Kim2, Chang-Soo Kim1 |
| 소속 | 1Department of Materials Engineering, 2Chungnam National Univ. |
| 키워드 | Be and Mg doped GaN; single GaN precursor; MBE |
