| 학회 | 한국재료학회 |
| 학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 | 22권 1호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | Influence of plasma treatment on passivation properties of silicon nitride. |
| 초록 | The surface passivation process is one of the most important processes in the fabrication of solar cells. The passivation quality of the crystalline silicon wafer increases as the hydrogen atoms combine with the dangling bonds. Plasma pre-treatment is one of the most common methods that is used to increase passivation effects. Many groups have studied plasma pre-treatments with or without hydrogen. Hydrogen plasma pre-treatment is used in silicon technology for various reasons. Hydrogen plasma treatment increases passivation quality and the surface recombination velocity decreased after hydrogen plasma treatment. In this study, the change in the minority carrier lifetime and the differences of the hydrogen plasma pre-treatment were examined, along with the effects of hydrogen plasma post-treatmnet on the passivation of a single crystalline silicon wafer. The minority carrier lifetime of crystalline silicon wafers that were passivated with SiNx:H films using plasma enhanced chemical vapor deposition was investigated in order to study the effect of hydrogen plasma pre-treatment and post-treatment on passivation. Minority carrier lifetime depends on pre- and post-treatment time and it is related to the decrease in the native oxide.The SiNx:H film was deposited on the back surface and hydrogen plasma was applied to the front surface of the wafer. The SiNx:H film deposition was carried out at a low temperature (＜ 370 ℃) in a direct plasma reactor operated at 13.65 MHz. The passivation quality measurement after the hydrogen palsma pre-treatment and the compasrison with the hydrogen plasma post-treatment were made using Quasi-steady-state photo-conductance and Fourier transform infrared spectroscopy. |
| 저자 | 김재은, 이경동, 이해석, 강윤묵, 김동환 |
| 소속 | 고려대 |
| 키워드 | solar cell; silicon nitride; passivation |
