| 학회 | 한국재료학회 |
| 학술대회 | 2005년 봄 (05/26 ~ 05/27, 무주리조트) |
| 권호 | 11권 1호 |
| 발표분야 | 전자재료 |
| 제목 | 투명전극용 ZnO:Al 박막의 전기광학적 특성에 미치는 밀도의 영향 |
| 초록 | ZnO (zinc oxide) films have been actively investigated as transparent electrode materials for display. We report the influence of the film density on electro-optical properties of Al-doped ZnO thin films. Al-doped ZnO (AZO) thin films were deposited on corning glass #1737 substrates by d.c. magnetron sputtering method at 150 ℃ using ZnO-2 wt% Al2O3 ceramic target. Argon was introduced near the substrate. The films were deposited in the working pressure from 1 mTorr to 10 mTorr. The film density was varied with working pressures and it was the highest at the pressure of 1 mTorr. It was explained by atomic bombardment effect. XRR (X-Ray reflectivity) method was used to investigate the variation of the density. The resistivity was the lowest at the point of 1 mTorr. Hall effect measurement analysis was done to understand the variation of the resistivity. It was found that carrier mobility is a dominant factor for controlling the resistivity more than the carrier concentration. Optical property was measured by UV-vis-nir spectrometer. |
| 저자 | 방보래1, 구홍모1, 문연건1, 김쇄현1, 정창오2, 박종완1 |
| 소속 | 1한양대, 2삼성전자주식회사 LCD(연) |
| 키워드 | density; resistivity; working pressure; Al doped ZnO; transparent electrode; display |
