| 학회 |
한국재료학회 |
| 학술대회 |
2008년 가을 (11/07 ~ 11/07, 차세대융합기술연구원) |
| 권호 |
14권 2호 |
| 발표분야 |
반도체재료 |
| 제목 |
A study on the growth and electrical properties of [LaVO3]m/[LaAlO3]1 superlattice by pulsed laser deposition |
| 초록 |
The (LaVO3)m/(LaAlO3)1 superlattices were grown on stepped-SrTiO3 single crystal substrate with a various stacking periods by laser molecular beam epitaxy (L-MBE). The stacking period was varied from 1 unit cell to 6 unit cells( m = 1 ~ 6 ). The growth mode was investigated by in-situ reflection high energy electron diffraction (RHEED) and atomic force microscopy(AFM). The electrical properties were investigated by 4-points probe method in the temperature range of 80K ~ 400 K. The RHEED oscillation and AFM image showed that the superlattices were grown in layer by layer growth. The resistivity depended on oxygen pressures. The samples deposited at oxygen pressures above 10-6 Torr showed the metallic behavior, while those deposited at oxygen pressures below 10-6 Torr exhibited the insulating behavior. We discuss the growth and electrical properties with various stacking periods. |
| 저자 |
Sungbong Ma1, Bach Thang Phan2, Jaichan Lee1
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| 소속 |
1School of Advanced Materials Science and Engineering, 2Sung Kyun Kwan |
| 키워드 |
LVO3/LAO3 superlattice; L-MBE
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| E-Mail |
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