| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | The Growth of the lanthanum oxide thin films for application as a gate oxide by plasma enhanced atomic layer deposition |
| 초록 | It is necessary to replace SiO2 gate dielectrics as device dimension continues to shrink. Therefore, high-κ materials have been interest recently to solve limitations of SiO2 such as electron tunneling and leakage current. We have investigated La2O3 high-κ materials due to its high dielectric constant and the good thermal stability with Silicon substrates. Atomic layer deposition has a number of advantages, such as good film uniformity, excellent step coverage, atomic level composition control and low level of contaminations. In this work, lanthanum oxide thin films were deposited on Si(100) substrate with La(EtCp)3 as a source, and O2 or O3 gas as a reactant by plasma enhanced atomic layer deposition (PEALD). From the result of X-ray diffraction (XRD), we will determine the crystal structure of the deposited films. Electrical properties will extract from the C-V and I-V measurements such as leakage currents, Dielectric constant, EOT, capacitance and leakage current. RBS will determine the chemical composition, and also we will compare O2 with O3 plasma characteristics then we will discuss the results of O3 plasma effect. |
| 저자 | Jun-Ho Moon1, Myoung-Gyun Ko2, Eun-Joo Lee1, Sang-Kyun Park2, Min-Soo Hong1, Yoo-Jin Jeon2, Jong-Wan Park1 |
| 소속 | 1Division of Materials Science and Engineering, 2Hanyang Univ. |
| 키워드 | La2O3(lanthanum oxide); PEALD; High-k material |
