| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 가을 (10/08 ~ 10/09, 광주과학기술원 오룡관) |
| 권호 |
34권 2호 |
| 발표분야 |
OLED 소재 및 소자기술 동향(분자전자 부문위원회) |
| 제목 |
Flexible zinc oxide transparent thin-film transistorswith a polymer gate dielectricfabricated by a microwave heating process |
| 초록 |
The authors report solution-processed flexible zinc oxide (ZnO) transparent thin-film transistors (TFTs) with a poly(2-hydroxyethyl methacrylate) (PHEMA) gate dielectric. The ZnO active layer fabricated by microwave heating showed a highly uniform and densely packed array of the large crystal size (~58 nm) in the [002] direction of ZnO nanorods on the plasma-treated PHEMA gate dielectric. The flexible ZnO TFTs with the plasma-treated PHEMA dielectric exhibited a mobility of 1.1 cm2V-1s-1, an on-off ratio of 103 whereas the mobility of TFTs with the bare PHEMA dielectric showed 0.13 cm2V-1s-1. |
| 저자 |
양찬우, 안태규, 장재영, 홍기표, 정대성, 남수지, 박찬언
|
| 소속 |
포항공과대 |
| 키워드 |
ZnO; thin-film transistors; flexible electronics; microwave heating
|
| E-Mail |
|
