| 학회 | 한국재료학회 |
| 학술대회 | 2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 | 24권 1호 |
| 발표분야 | B. 나노화학/바이오 분과 |
| 제목 | Double gate MoS2 field-effect transistor for high sensitive and reproducible biosensor |
| 초록 | Field-effect transistor (FET) based biosensors have recently drawn tremendous attention as because of label-free, high sensitivity, rapid response, and simple operation. Especially, future-oriented medical applications such as real-time monitoring and point-of care systems of diseases allow the development of various sensing materials and device structures. For high performance FET-based biosensor, 2D layered materials, such as transition metal dicalcogenizes (TMDs), have been proposed as a sensing material because of its large surface to volume ratio. Among them, MoS2 has great potential with large bandgap over 1 eV representing that binding event of biomolecules more effectively modulate the carrier transport behavior. In this work, we suggested a MoS2 double gate FET for high sensitive prostate specific antigen (PSA) detection sensor. While the device was operated with bottom gate voltage, the biomolecules modulated the carrier behavior when they are on the MoS2 channel. Anti-PSAs were uniformly immobilized and well-oriented on MoS2 surface with conventional 3-aminoproplytriethoysilane and glutaraldehyde process. The detection of positive charged target biomolecules, PSA, were confirmed with both electrical characteristics and surface potential from Kelvin probe force microscope. All measurements were performed in dry environment which further enhanced reproducibility and sensitivity. The limit of detection was 100 fg/mL, which is much lower value than clinical cut-off level of 4 ng/mL. We also confirmed the possibility of more sensitive and power-efficient MoS2 biosensor with optimizing device parameters through theoretical simulation, which could contribute in future studies. |
| 저자 | Heekyeong Park, Sunkook Kim |
| 소속 | Sungkyunkwan Univ. |
| 키워드 | MoS2; transistor; biosensor; double gate |
