| 초록 |
Ge has attracted much attention since it can provide an interesting platform for higher performance electronics over Si. One-dimensional structures based on Ge can be even more interesting due to its size effect on electrical properties. Here we report growth of single-crystalline Ge nanowires whose shape can be reproducibly controllable by catalyst-assisted chemical vapor synthesis using GeH4 as a precursor. In our talk, we discuss precise shape-control of Ge nanowire as a function of growth parameters, such as growth temperature and GeH4 partial pressure. We also propose a phenomenological model Ge nanowires growth in contrast with Si nanowires based on our observation. |
