| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Effects of Non-Prestonian Behavior of Ceria Slurry with Anionic Surfactant on Abrasive Concentration and Size in Shallow Trench Isolation Chemical Mechanical Polishing |
| 초록 | Ceria (CeO2) slurries with surfactant are widely used in shallow trench isolation (STI) chemical mechanical polishing (CMP). Ceria slurry that exhibit non-Prestonian behavior with respect to the polishing rate as a function of pressure, resulting in high-planarity polishing, are expected to be used in the future for both oxide film and metal applications. In this study, we investigated the effects of the non-Prestonian behavior of ceria slurry with anionic surfactant on the size and concentration of abrasive particles by performing CMP experiments. In this experiment, the grain size of the ceria was controlled through to be 30 to 50nm and secondary particle size controlled by applying ball mill with a target size range of approximately 72 to 290 nm. The milling time was varied with duration of 8, 28, and 36 hrs for slurries designated as A (Large), B (Medium) and C (Small), respectively. Hence, we diluted each of slurry with de-ionized water to produce final ceria abrasive concentration of 0.25, 0.5, and 1 wt% for slurry B with and without surfactant addition (0.8 wt%). We found that not only the abrasive size but also the abrasive concentration with surfactant addition influences the non-Prestonian behavior. Such behavior is clearly exhibited with small abrasive sizes and a higher concentration of abrasives with surfactant addition, because the abrasive particles can locally contact the film surface more effectively with applied pressure during STI-CMP process. The Korea Ministry of Science and Technology supported this work through the National Research Laboratory (NRL) program. We thank SUMCO Corp. and Hynix Semiconductor, Inc. for helping us with our experiments. |
| 저자 | Hyuk-Yul CHOI1, Hyun-Goo KANG2, Jun-Seok KIM1, Ungyu PAIK2, Jea-Gun PARK1 |
| 소속 | 1Nano-SOI Process Laboratory, 2Hanyang Univ. |
| 키워드 | CMP; Shallow Trench Isolation; non-Prestonian; Ceria; Surfactant |
