| 학회 | 한국재료학회 |
| 학술대회 | 2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 | 20권 1호 |
| 발표분야 | F. 광기능/디스플레이 재료(Optical Functional and Display Materials) |
| 제목 | Characteristics of Low Temperature Al2O3 Encapsulation for Organic Devices by Remote Plasma Atomic Layer Deposition |
| 초록 | Recently, researchers are interested in organic electronic devices which can be applied to various fields. However, organic materials are very sensitive to the surrounding environments such as oxygen and water, so they need encapsulation to protect them. For this reason, glass is usually used for encapsulation materials, but thin film encapsulation (TFE) is required for future flexible organic devices. To realize flexible organic devices, TFE on plastic substrate must be deposited at low temperature because plastic substrate and organic materials can be deformed by heat. Promising TFE materials can be deposited at low temperature exist ZrO2, HfO2, and Al2O3 thin film. In particular, Al2O3 is commonly used for TFE material because it has many advantages; for example, high transmittance, excellent thermal and chemical stability. Al2O3 thin films have been deposited by spray pyrolysis, sputtering, chemical vapor deposition (CVD), and atomic layer deposition (ALD). Especially, ALD is possible to low temperature process, and it has many adantages such as excellent step coverage, high uniformity for large area, and precise thickness control. Furthermore ALD is a method used to deposit thin films based on sequential process and self-limiting reaction. In addition, Remote Plasma ALD (RP-ALD) is effective to reduce the plasma damages which are generated by radicals and ions entering into the chamber through the showerhead by a downstream flow, so we used RP-ALD to deposit Al2O3 films. In this report, we carried out about various process temperatues between 50 ℃ to 200 ℃ to find optimum condition of Al2O3 thin films as TFE. To deposit Al2O3 thin films, trimethylaluminum (TMA) as Al preursor, O2 plasma as O reactant and Ar gas as purge gas were used. A cycle of ALD has 4 steps; TMA pulse time (1s) - Ar purge (50s) - Oxygen plasma (6s) - Ar purge (10s). The temperature of TMA is at room temperature (23 ℃), and the process pressure is 0.5 torr. Oxygen plasma was remotely generated by capacitively coupled plasma (CCP) discharge produced at a frequency of 13.56 MHz at 200W at the upper plasma generation zone. All films were deposited under same condition except for process temeprature. In order to analyze Al2O3 thin films, we used various analysis equipment; Auger electron spectroscopy (AES), Fourier transform infrared spectroscopy (FTIR), X-ray reflectometry (XRR), and Atomic force microscopy (AFM). Finally, water vapor transmission rate (WVTR) values of Al2O3 thin films were calculated using the Ca degradation test. |
| 저자 | 오주홍, 최학영, 신석윤, 박주현, 함기열, 최용혁, 전형탁 |
| 소속 | 한양대 |
| 키워드 | Display; Encapsulation; ALD; Encapsulation |
