| 학회 |
한국화학공학회 |
| 학술대회 |
2003년 가을 (10/24 ~ 10/25, 한양대학교) |
| 권호 |
9권 2호, p.1857 |
| 발표분야 |
분리기술 |
| 제목 |
Process Development of Photoresist Removal from Commercial Silicon Wafers Using Supercritical Carbon Dioxide |
| 초록 |
World wide in recent years, a significant attention has been placed on the alternative replacement of DI water and toxic chemicals in wet cleaning stations in semiconductor industry by the environmentally-benign supercritical carbon dioxide-based gas-phase solvent. However, due to the intrinsic property deficiency such as density of carbon dioxide at supercritical state, it is not yet practically implemented. During the last several years, the present authors also have been focused their attention to search appropriate property modifiers and subsequently the new development of supercritical dry cleaning unit. In this article, some significant results obtained to date such as new property modifiers, effect of process conditions on the removal of photo-resist in various conditions from commercial patterned silicon wafer is discussed. |
| 저자 |
유기풍1, 한갑수2, 김선영3
|
| 소속 |
1서강대, 2R&D Center, 3Greentek 21 Co. |
| 키워드 |
Supercritical Fluid;Photoresist Removal |
| E-Mail |
|
| 원문파일 |
초록 보기 |
