| 학회 | 한국재료학회 |
| 학술대회 | 2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 | 18권 1호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Effect of enhanced-mobility current path in transparent a-IZGO TFT |
| 초록 | Wide bandgap oxide-based thin film transistors (TFTs) have attracted much attention for novel applications. Amorphous-InGaZnO(a-IGZO) TFT was first reported by Nomura et al. Since the a-IZGO is a wide bandgap material, transparent TFTs can be realized with a combination of transparent conductive oxide electrodes and insulator. The “see-through” display based on this concept was proposed firstly using a-ZTO transparent TFT and a pixel of OLED. Regarding the current research issues involved in the oxide TFTs, one important issue is the mobility. In order to enhance the field effect mobility, searching for a new active layer material or the structural modification has been attempted to date. The dual channel structure in which the high conductive additional current path is embedded in the channel layer resulted in the mobility. However, understanding of the role of additional current path on the field effect mobility has not been studied in depth. In this study, we have selected indium tin oxide (ITO) as a transparent enhanced-mobility current path and an electrode material to realize fully transparent transistor. We have evaluated electrical properties of ITO embedded a-IGZO TFT according to size of ITO additional current path. |
| 저자 | Jin Hyeong Park1, Duck Kyun Choi2 |
| 소속 | 1Department of Materials Science and Engineering, 2Hanyang Univ. |
| 키워드 | AOS TFT; IGZO; ITO; transparent |
