| 초록 |
Recently, Cu2ZnSn(S, Se)4 (CZTSSe) solar cells have have attracted great attention by the utility of earth abundant elements to replace the In and Ga of the well-developed Cu(In,Ga)(S, Se)2 (CIGS) absorbers. CdS is one of the most researched buffer materials and is generally deposited by a chemical bath deposition (CBD) method. Due to the toxicity of Cd, many studies have attempted to replace CdS with Cd-free buffer layers. Zn(O, S) is a promising candidate to replace CdS buffer with a wide band gap and non-toxic material. In addition, alternative Cd-free buffer layers deposited by atomic layer deposition (ALD) may be more advantageous for industrial production compared to CBD processes, primarily due to less chemical waste and the possibility of a complete vacuum-based production line. In this work, a CZTSSe solar cell with Zn(O,S) buffer was fabricated on a flexible substrate using ALD method. The effect of the temperature of Zn(O,S) deposition on the CZTSSe solar cell was investigated. The optimum Zn(O,S) deposition temperature is a 100°C as shown by atomic force microscope(AFM). |
