| 초록 |
The polymer poly(o-anthranilic acid) (PARA) was synthesized, and PARA films with various thicknesses were prepared with various doping levels by using aqueous hydrochloric acid and ammonium hydroxide on ITO-deposited silicon substrates. The surface topographies and I-V characteristics of the PARA films deposited on the ITO electrodes were investigated in detail using CS-AFM analysis. Interestingly, self-doped films (which are at an intermediate doping level) were found to have a novel electrical bistability, i.e., a switching characteristic like that of Schottky diodes, and increasingly insulating characteristics as the film thickness was increased. |
