| 학회 |
한국재료학회 |
| 학술대회 |
2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 |
22권 2호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Electrical Characteristics of Ferroelectric PZT Film prepared by Aersol-Deposition. |
| 초록 |
The aersol-deposition (AD) method was used to deposit PZT [Pb(Zr0.52Ti0.48)O3] films on silicon substrate. By usuing the AD method, films have nano-grain and thea behave like the nano domain of relaxor ferroelectric. We control the post annealing temperatures to control the phase transition behavior. The crystallinity AD PZT thick films was enhanced by annealing at 450, 550 and 650℃ for 2h. PZT compose powder was observed provskite structure, as shown in XRD (X-ray diffraction). SEM (canning electron microscopy) revealed that the calcination temperature influenced the morphology of the PZT compose powder. The polarization - electric field (P-E) hysteresis loops were examined using a standard ferroelectic test system. The ferroelectric behavior of the films annealed at 650℃ was independent on the temperature. |
| 저자 |
박춘길1, 정대용1, 류정호2, 최종진2, 한병동2
|
| 소속 |
1인하대, 2재료(연) |
| 키워드 |
<P>pzt</P><P>aerosol-deposition</P> |
| E-Mail |
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