| 학회 | 한국재료학회 |
| 학술대회 | 2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 | 13권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Fabrication and Characterization of the Point-contacted Amorphous/Crystalline Heterojunction Silicon Solar Cells |
| 초록 | Amorphous silicon (a-Si:H)-crystalline silicon (c-Si) heterojunction solar cells have attracted much attention because of their various advantages, such as simple fabrication steps, low process temperatures and a high thermal stability. Among various heterojunction types, HIT (heterojunction with intrinsic thin-layer) cells have confirmed high efficiencies (＞20%) and high open-circuit voltages (＞710 mV). One of the critical issues in obtaining highly efficient heterojunction solar cells is to obtain an abrupt and uniform interface with a low defect density. It is known that passivating the a-Si/c-Si interface is a key factor for determining the overall solar cell performance, by improving the open-circuit voltage and the fill factor. However, it is very difficult to obtain a high-quality a-Si:H/c-Si interface, due to the residual impurities on the c-Si wafer and the ion bombardment during the plasma deposition of the a-Si:H. In this work, we fabricated point-contact (n) a-Si:H / (p) c-Si and (p) a-Si:H/ (n) c-Si heterojunction solar cells passivated by SiO2 layer in nearly most area (＞80%) to minimize the interface defect and investigated the electrical and optical properties in the point contacted cells between emitter and base. Tthe point contacted heterojunction solar cells between emitter and base showed good electrical and optical properties, which means that this new structure can be applied on various types of solar cell. |
| 저자 | 옥영우1, 윤경훈2, 이정철2, 김상균3, 김동환1 |
| 소속 | 1고려대, 2한국에너지기술원, 3광주과학기술원 |
| 키워드 | Si heterojunction; solar cells; point-contact |
