| 학회 |
한국재료학회 |
| 학술대회 |
2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 |
15권 1호 |
| 발표분야 |
전자재료 |
| 제목 |
투명전극재료의 잉크젯 프린팅을 이용한 용액공정 투명 박막 트랜지스터 제작 |
| 초록 |
Semiconductor and electrode layers for thin-film transistor are fabricated using solution-processable sol-gel method with zinc oxide (ZnO) material. For higher-performance thin-film field-effect transistors (TFTs), we investigate the influence of the fabrication conditions on the electrical characteristics by controlling the sol-gel composition, annealing temperature, and atmosphere. TFTs devices made from 57 nm-thick zinc tin oxide (ZTO) semiconductor deposited by spin coating and 95 nm-thick ink-jetted zinc indium oxide (ZIO) electrode have been fabricated. The resulting devices show mobilities of 1.1 cm2V-1S-1, on/off ratios of ~108, threshold voltage of 3.2 V and a subthreshold slope of 0.2 V/decade, which is comparable to the characteristics of TFTs fabricated by vacuum deposited aluminium electrode. |
| 저자 |
송근규1, 전태환1, 김동조1, 김범기1, 정영민1, 구창영1, 노정훈2, 조승환2, 문주호1
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| 소속 |
1연세대, 2삼성전자 LCD총괄 |
| 키워드 |
Solution-processed; zinc tin oxide; zinc indium oxide; thin-film transistors
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| E-Mail |
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