| 학회 | 한국재료학회 |
| 학술대회 | 2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 | 21권 1호 |
| 발표분야 | C. 에너지 재료 |
| 제목 | Heteroepitaxial growth of β-Ga2O3 thin films on sapphire substrate by plasma-assisted molecular beam epitaxy |
| 초록 | Monoclinic structured gallium oxide, β-Ga2O3 has a wide band gap of 4.9 eV and has great potential in applications such as transparent electronic devices, transparent conductors, ultraviolet photo detector. Various methods have been used for Ga2O3 thin film growth such as metal organic chemical vapor deposition, vapor phase epitaxy, sputter deposition, mist chemical vapor deposition and molecular beam epitaxy. In our experiment, β-Ga2O3 thin films were grown on (0001) c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The optimized growth condition was found by varying the growth temperatures and Ga fluxes in wide ranges. During the growth processes, crystal quality was monitored by reflection high-energy electron diffraction. The influences of growth temperature on surface morphology have been systematically investigated by atomic force microscope (AFM). The crystal structure and orientation of the films were examined by using X-ray diffraction. Strongly (-201) oriented β-Ga2O3 films on (0001) c-plane sapphire were found. |
| 저자 | Trong Si Ngo1, Duc Duy Le2, Soon-Ku Hong1 |
| 소속 | 1Department of Advanced Materials Engineering, 2Chungnam National Univ. |
| 키워드 | Ga<SUB>2</SUB>O<SUB>3</SUB>; molecular beam epitaxy; c-plane sapphire |
