| 초록 |
Transferring high-quality CVD-grown graphene from metal catalyst to arbitrary substrates is one of the most important issues for fabrication of graphene-based electronic devices. We have developed a water-free transfer method for large-area graphene. Our method enables the transfer of large-area graphene onto any substrate material, even those that are easily damaged or dissolved by water, such as water-sensitive inorganics, salt, silk, and organic semiconductors. We utilized our water-free transfer technique to fabricate flexible and air-stable graphene field-effect transistors. The graphene transistors operated at a supply voltage of only 4 V with an average Dirac voltage of 0.38 (±0.22) V and exhibited high field-effect mobility values of 2,575 (±278) and 3,075 (±193) cm2/V•s for holes and electrons, respectively, in air. Thousands of bending tests with a bending radius of 0.5 cm did not degrade the performance of the flexible graphene transistors. |
