| 학회 | 한국재료학회 |
| 학술대회 | 2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 | 25권 2호 |
| 발표분야 | 특별심포지엄5. 초고속 저전력 광 데이터 처리용 소자 심포지엄-오거나이저:송용원(KIST) |
| 제목 | Broadband gain InAs/GaAs quantum dots grown on Si by molecular beam epitaxy |
| 초록 | Monolithic integration of high performance III-V lasers onto Si has been considered an important task for decades. Direct wafer-bonding technique made possible commercial InP-based quantum well (QW) lasers on silicon. However direct epitaxial growth of various III-V materials on Si wafer may provide a more economical approach at better scalability. High quality InAs quantum dots (QDs) emitting at 1.3 μm grown by molecular beam epitaxy demonstrated significantly improved laser performance as well as device reliability. Furthermore, the large inhomogeneous broadband gain of QDs is intriguing for generating ultra-short pulse trains via passive mode-locking. 9 GHz passively mode-locked QD lasers monolithically integrated onto Si have been realized, which produced 1.3 picosecond short pulses. The corresponding optical gain spectrum full-width at half-maximum (FWHM) was, however, only 3.56 nm. Scaling the spectral bandwidth is critical for dense wavelength division multiplex (DWMD) source. Here, we demonstrate a 1.3 μm broadband spectral gain QD mode-locked laser epitaxially grown on silicon with an 3dB spectral bandwidth of 6.1 nm. By differing the In0.15Ga0.85As QW pre-layer and post-layer, the photoluminescence (PL) FWHM of the full laser structure with QD layers has been increased from 38 nm (28.6 meV) to 56 nm (43 meV) while maintaining the PL intensity. We believe that this technique is a very useful way to increase the optical bandwidth of a QD mode-locked laser and to augment the number of channels for DWDM systems. |
| 저자 | 정대환 |
| 소속 | 한국과학기술(연) |
| 키워드 | <P>Quantum dot laser; Si photonics; Molecular beam epitaxy; III-V photonics</P> |
