| 학회 |
한국재료학회 |
| 학술대회 |
2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 |
24권 2호 |
| 발표분야 |
F. 광기능/디스플레이 재료 분과 |
| 제목 |
Epitaxial growth of three-dimensional InxGa1-xN/GaN light emitting crystals based on Hydrothermally grown ZnO Templates |
| 초록 |
The increasing demands for three-dimensional (3D) electronic and optoelectronic devices have triggered interest in epitaxial growth of 3D semiconductor materials. However, most of the epitaxially-grown nano- and micro-structures available so far are limited to certain forms of crystal arrays, and the level of control is still very low. Here, we describe our latest progress in 3D epitaxy of oxide and nitride semiconductor crystals ranging from (i) low-temperature solution- phase synthesis of a well-regulated array of ZnO single crystals to (ii) systematic control of the axial and lateral growth rate correlated to the diameter and interspacing of nanocrystals, as well as the concentration of additional ion additives. In addition, the critical aspects in the heteroepitaxial growth of GaN and InGaN multilayers on these ZnO nanocrystal templates are discussed to address its application to a 3D light emitting diode array. |
| 저자 |
Dong Won Yang1, Won Il Park2
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| 소속 |
1Division of Materials Science & Engineering, 2Hanyang Univ. |
| 키워드 |
LED; GaN; ZnO; MOCVD; 3D structure
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| E-Mail |
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