| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 봄 (04/07 ~ 04/08, 대전컨벤션센터) |
| 권호 |
36권 1호 |
| 발표분야 |
분자전자용 소재 및 소자 |
| 제목 |
Hydroxy-Terminated Oligothiophene Based Thin-Film Transistors |
| 초록 |
We report electrical and optical properties of α, ω-disubstituted sexithiophene containing hydroxyalkyl groups. Bis(hydroxypropyl)-sexithiophene (bHP6T) was synthesized. The crystal structure of the bHP6T was studied by small and wide angle x-ray scattering (SAXS/WAXS) to understand how it is affected by the end group modification. Top contact organic thin film transistors (OTFTs) were fabricated and the electrical properties were studied. The morphology of the semiconducting layer of the sexithiophene was investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD) method. This work was supported by the Program for Integrated Molecular Systems (PIMS) at GIST and the Basic Science Research Program (2010-0000282). Korean Science and Engineering Foundation (R01-2008-000-12246-0) |
| 저자 |
정상미1, 정은영2, 박지웅1
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| 소속 |
1광주과학기술원 신소재공학과, 2삼성 SDI |
| 키워드 |
oligothiophene; organic thin film transistor; morphology
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| E-Mail |
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