| 학회 | 한국재료학회 |
| 학술대회 | 2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 | 21권 1호 |
| 발표분야 | F. 광기능/디스플레이 재료 |
| 제목 | High-Mobility ZnON Thin-Film Transistors Fabricated By RF Reactive sputtering |
| 초록 | Increasing demands for high performance switching or driving transistors in the display industry have led to the development of high mobility metal oxide semiconductors such as In-Ga-Zn-O (IGZO) and Hf-In-Zn-O (HIZO). Thin-film transistors (TFT) that incorporate such materials exhibit field effect mobility, exceeding 10 cm2/Vs, and are suitable for the fabrication of Ultra-definition (UD, 4000×2000), large-area (＞70 inch) displays, fast frame rate (＞480 Hz). However, further advances in display technology aim at producing 3D images or driving organic light-emitting diodes (OLED) while satisfying the above criteria. In this regard, transistors with even higher field effect mobility (＞30 cm2/Vs) must be integrated in the backplane array. In this study, a recent work on a relatively new type of semiconductor, namely zinc oxynitride (ZnON) as a promising candidate for the next-generation display applications, will be presented. In order to ensure the high mobility and high stability of ZnON TFTs, deposition and heat treatment conditions of ZnON semiconductors were optimized. |
| 저자 | 김양수, 김현석 |
| 소속 | 충남대 |
| 키워드 | TFT; ZnON; RF reactive sputtering |
